silicon carbide patents and patent applications class 501
Class Definition for Class 75United States Patent and
Class 420 also provides for patents claiming an article by name only without any positive structural limitation and reciting the metal or alloy or metallic composition of which the article is made. Process wherein Silicon carbide is present in the treating agent separately prepared slag or flux. the patent is placed in Class 228 and
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Pore-forming patent application class
Class / Patent application number Description Number of patent applications / Date published Pore-forming 45 CERAMIC-BODY-FORMING BATCH MATERIALS COMPRISING SILICA METHODS USING THE SAME AND CERAMIC BODIES MADE THEREFROMThe disclosure relates to ceramic-body-forming batch materials comprising at least one pore former
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CLASS 501 COMPOSITIONS CERAMIC 501United States
CLASS 501 COMPOSITIONS CERAMIC 1 CERAMIC COMPOSITIONS 87 .Carbide or oxycarbide containing 88 ..Silicon carbide 89 And aluminum compound 90 And carbonaceous material 91 And different carbide 92 An d bor ide silicide nitride or oxynitride
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High-Thermal-Conductivity SiC and Applications SpringerLink
E. G. Acheson "Production of Artificial Crystalline Carbonaceous Materials " US Patents # 492 767 (1893) "Composition of Matter for Abrading Articles" US Patent # 572 852 (1896).
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mi2-factory
made of silicon carbide (SiC) a material that represents a huge technological leap for wind power photovoltaics and electromobility. Our technology enables novel designs reduces costs and increases the performance and yield of microchips. Why silicon carbide Silicon carbide wafer for power microchips. Energy-Filter for Ion Implantation. Ion
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USASilicon carbide gemstonesGoogle Patents
silicon carbide gemstone sic synthetic silicon diamond Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) ExpiredLifetime Application number US08/739 784 Inventor Charles Eric
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And Different Carbide Patents and Patent Applications
Jul 11 2018 · And Different Carbide Patents and Patent Applications (Class 501/91)Justia Patents Search And Different Carbide Patents (Class 501/91) SiC sintered body heater and method for producing SiC sintered body Patent number
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Cree and STMicroelectronics Announce Multi-Year Silicon
Jan 07 2019 · DURHAM N.C. and GENEVA Jan. 7 2019 — Cree Inc. (Nasdaq CREE) announces that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to STMicroelectronics (NYSE STM) a global semiconductor leader serving customers across the spectrum of electronics applications. The agreement governs the supply of a quarter billion dollars of
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High-purity silicon to form silicon carbide for use in a
This web page summarizes information in PubChem about patent USA1. This includes chemicals mentioned as reported by PubChem contributors as well as other content such as title abstract and International Patent Classification (IPC) codes. To read more about how this page was constructed please visit the PubChem patents help page.
Get PriceSilicon Carbide Schottky DiodeON Semiconductor
Silicon Carbide Schottky Diode 1200 V 15 A FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current temperature independent switching characteristics and excellent
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Discontinuous silicon carbide fiber reinforced glass
Cross Reference to Related Applications. U.S. Patent application Ser. No. 121 081 filed Feb. 13 1980 now U.S. Pat. No. 4 324 843 by the same inventors as the present application and commonly assigned is directed to silicon carbide fiber reinforced ceramic composites U.S. Patent application Ser. No. 147 672 filed May 7 1980 now U.S. Pat. No. 4 314 852 by the same inventors as the
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Class Definition for Class 75United States Patent and
Class 420 also provides for patents claiming an article by name only without any positive structural limitation and reciting the metal or alloy or metallic composition of which the article is made. Process wherein Silicon carbide is present in the treating agent separately prepared slag or flux. the patent is placed in Class 228 and
Get Price(PDF) Silicon carbide high-power devices Kevin Nordquist
He has authored or co-authored 38 papers Dr Carter is a member of American Vacuum Society and the Materials published in various conference proceedings and refereed journals He has Research Society He also serves on the Board of Directors for Cree Research also been cited as a co-inventor on three patent applications pertaining to Inc silicon
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United States Patent and Trademark Office Patent
Crystallization Of Grain Boundery Phases In Silicon Carbide Ceramics Patent Application United States Patent and Trademark Office Patent Application No. Examiner Karl E Group presiding. Class / Sub-Class 501 / 92 Entries (30) Assignments (4) Related (0) Tools
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Method of producing silicon carbide articles (Patent
Abstract. A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made.
Get PriceUSB2High resistivity silicon carbide single
USB2 US10/281 173 USA USB2 US B2 US B2 US B2 US A US A US A US B2 US B2 US B2 Authority US United States Prior art keywords crystal deep silicon carbide resistivity concentration Prior art date Legal status (The legal status is an assumption and is not a
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SILICON CARBIDE COMPOSITIONSPont DU.
Submicron silicon carbide Hexagonal silicon carbide crystals produced from an elemental silicon vapor deposited onto a carbon plate Tetraboronsilicide Method of producing titanium in an agitated solids bed Carbides of tantalum and like metals and method of
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USA1Silicon carbide semiconductor device and
silicon carbide semiconductor substrate carbide semiconductor principal Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number US11/108 906 Other versions
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SILICON CARBIDE COMPOSITIONSPont DU.
Submicron silicon carbide Hexagonal silicon carbide crystals produced from an elemental silicon vapor deposited onto a carbon plate Tetraboronsilicide Method of producing titanium in an agitated solids bed Carbides of tantalum and like metals and method of
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Silicon carbide sintered body and a manufacturing method
A silicon carbide sintered body suitable for electrical discharge machining and a method for its manufacture are disclosed. The silicon carbide sintered body comprises 0.5-5 by weight of AlN 0.5-3 by weight (as Ti) of a Ti compound 0.5-8 by weight of C 0-3 by weight (as B) of B or a B compound and a remainder of substantially SiC.
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Cree Launches Industry s First Commercial Silicon Carbide
Jan 17 2011 · Together with our 600V 650V 1200V and 1700V SiC Schottky diodes Cree Power has established a new class of SiC power components that are destined to lead the power semiconductor industry in the years to come and eventually replace silicon devices in the majority of critical power electronics applications with breakdown voltage requirements
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High-purity silicon to form silicon carbide for use in a
This web page summarizes information in PubChem about patent USA1. This includes chemicals mentioned as reported by PubChem contributors as well as other content such as title abstract and International Patent Classification (IPC) codes. To read more about how this page was constructed please visit the PubChem patents help page.
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Pore-forming patent application class
Class / Patent application number Description Number of patent applications / Date published Pore-forming 45 CERAMIC-BODY-FORMING BATCH MATERIALS COMPRISING SILICA METHODS USING THE SAME AND CERAMIC BODIES MADE THEREFROMThe disclosure relates to ceramic-body-forming batch materials comprising at least one pore former
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PROJECT IMPACT SHEETARPA-E
Patent and Trademark Office (PTO) patent Patents "Vertical power transistor with built-in gate buffer " (11/10/2015) Patent No Washington DC U.S. Patent and Trademark Office. The APEI/Wolfspeed team has also published the scientific underpinnings of this technology extensively in the open literature. A
Get PriceAnd Different Carbide Patents and Patent Applications
Nov 18 2002 · And Different Carbide Patents (Class 501/91) Reinforcement preform for metal matrix composites. Patent number . Abstract A preform for use in a metal matrix composite particularly for a magnesium metal composite. In the preform the reinforcing material typically is silicon carbide boron nitride titanium nitride carbon or graphite.
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USAMonolithic fully dense silicon carbide
USA US08/115 679 USA USA US A US A US A US A US A US A US A US A US A Authority US United States Prior art keywords silicon carbide powder aluminum nitride densification agent fracture Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.
Get PriceClass Schedule for Class 427 COATING PROCESSES
FOR101. Base includes inorganic silicon or metal containing compound (e.g. glass ceramic brick etc.) (427/255) FOR102. Mixture of vapors or gases utilized (427/255.1) FOR103. The resultant coating is a mixture or a compound formed from the mixture utilized (427/255.2)
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Carbide Or Oxycarbide Containing Patents and Patent
Carbide Or Oxycarbide Containing Patents (Class 501/87) Silicon carbide (Class 501/88) And aluminum compound (Class 501/89) And carbonaceous material (Class 501/90) Applications of the compositions include filters solid-oxide fuel cells membranes ceramic cutting tools and wear and auto parts. In one example 10 g of AlCl6.6H2O is added
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Of carbon (i.e. silicon carbide) patent application class
Of carbon (i.e. silicon carbide) Subclass of 423Chemistry of inorganic compounds SILICON OR COMPOUND THEREOF Binary compound (e.g. silicide etc.) Patent class list (only not empty are listed) Deeper subclasses
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